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| FH2164 SILICON N-CHANNEL RF POWER MOSFET PACKAGE STYLE 400 BAL FLG (B) MIN: (In/mm) .060/1.52 .055/1.40 .124/3.15 .234/6.17 .635/16.13 .665/16.89 .092/.234 .555/14.10 .565/14.35 .739/18.77 .749/19.02 .315/8.00 .002/0.05 .055/1.40 .075/1.91 .245/6.22 MAX: (In/mm) .060/1.52 .065/1.65 .124/3.15 .253/6.34 DESCRIPTION: The ASI FH2164 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. A B C D E F G H 1 = SOURCE = FLANGE, 2 = CHAMFERED 45 LEADS = DRAIN O .092/.234 MAXIMUM RATINGS ID VDS PDISS 4.0 A 50 V 100 W @ TC = 25 C O 3 = GATE I J K L M N .327/8.31 .006/0.15 .065/1.65 .095/2.41 .190/4.83 .257/6.53 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 FH2164 CHARACTERISTICS (TC=25 C UNLESS OTHERWISE NOTED) SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS NONE CHARACTERISTICS SYMBOL BV DSS IDSS IGSS VGS gM Rdson Idsat Ciss Crss Coss Gps VSWR IDS = 50 mA TC = 25 OC TEST CONDITIONS VGS = 0 V VDS = 12.5 V VGS = 0 V VDS = 0 V VGS = 30 V MINIMUM 40 TYPICAL MAXIMUM 1.0 1.0 UNITS V mA A V mho Ohms A pF IDS = 100 mA VGS = VDS VDS = 10 V IDS = 8.0 A VDS = 10 V VDS = 28 V VGS = 5.0 V VGS = 20 V VGS = 20 V VGS = 0 V f = 1.0 MHz 1.0 0.8 0.7 7.50 40 6.0 30 10 60 7.0 IDQ = 800 mA VDS = 12.5 V f = 400 MHz 20:1 dB % RELATIVE A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without |
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